Design of RF Low Noise Amplifier at 2GHz in 0.18μm Technology

  • Minaxi Dassi Department of Electronics and Communication, Chitkara University, himachal Pradesh, India
  • Rajnish Sharma Department of Electronics and Communication, Chitkara University, himachal Pradesh, India
Keywords: RF circuit design, Low Noise Amplifier, 0.18μm technology

Abstract

A 2GHz Low Noise Amplifier (LNA) has been implemented in Cadence Spectre RF tool on UMC 0.18μm technology and is designed using a modified Cascode topology to work under reduced power supply. The input and output matching network is matched to 50Ω. After simulation it is found that at resonance frequency of 2GHz, the forward gain is 18.22dB and reverse isolation is -40.86dB.

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References

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Published
2014-12-30
How to Cite
Minaxi Dassi, & Rajnish Sharma. (2014). Design of RF Low Noise Amplifier at 2GHz in 0.18μm Technology. Journal on Today’s Ideas - Tomorrow’s Technologies, 2(2), 107-115. https://doi.org/10.15415/jotitt.2014.22008
Section
Articles